Time
7:45Welcome Address
Session We1: MTT-S TC-2 Special Session on Current Trends in Artificial Intelligence (AI), Machine Learning (ML), and Space Mapping (SM) Techniques for Microwave Design Automation
Chairpersons: José E. Rayas Sánchez and Marco Pirola
TimePaper TitleAuthorsInstitutionsCountryPresenter
8:00Machine-learning based Method for Nonlinear Device Modeling Q. J. Zhang, J. Y. CuiCarleton UniversityCanadaQ. J. Zhang
8:20Frequency-domain ANN Non-linear Active Device Model for Harmonic-Balance-based CADMarco Pirola, Chiara Ramella, Simone Corbellini, Simona Donati GuerrieriPolitecnico di TorinoItalyMarco Pirola
8:40Application of Artificial Neural Networks and Space Mapping in Modeling RF Power Transistors Lei Zhang, Humayun Kabir, Zhihao ZhaoRadio Power at NXP SemiconductorsUSALei Zhang
9:00Efficient Design of Compact and Wideband Microstrip Filters Using Space Mapping and Surrogate-Based Modeling TechniquesVicente Boria, Carlos Pons, Carolina García, Santiago Cogollos, Marco GuglielmiUniversitat Politècnica de ValènciaSpainVicente Boria
9:20Cognitive Parameter Extraction for Space Mapping Design OptimizationJosé E. Rayas SánchezITESO - The Jesuit University of GuadalajaraMéxicoJosé E. Rayas Sánchez
Chairperson: 
9:40Keynote We1: Gabriel Rebeiz, University of California, San Diego, USA, “Silicon-Based Phased-Arrays for SATCOM and 5G/6G: Lessons Learned from a life in Microwaves”
10:30Coffee Break and Industrial/Academic Exhibit
Session We2:  Special Session on Recent Developments in Microwave Research in Spain
Chairperson:  Mikel Laso
TimePaper TitleAuthorsInstitutionCountryPresenter
11:00Microwave developments for satellite and wireless communicationsMikel LasoUniversidad Pública de NavarraSpainMikel Laso
11:20Implementation of High-Frequency Devices using Additive Manufacturing: Analysis of Polymer Technologies, Metallization Techniques, and Sintered Alloy ApplicationsCarmen Bachiller, Aleksandr Voronov, Álvaro Ferrer, Lluc Sempere, Mirko Kunoswky, Asunción Martínez, Murta Capella, Maria L. Marín, Francisco BoscáUniversitat Politècnica de ValènciaSpainCarmen Bachiller
11:40Temperature-Dependent Electromagnetic Characterisation of Materials for CO2 Capture and UtilizationFelipe Penaranda-Foix, Reyes Mallada-Viana, José M. Catalá Civera, Jose D Gutierrez-Cano, Jose Luis Hueso-Martos, Beatriz Garcia-Baños, Pilar Lobera, Pedro J. Plaza-Gonzalez, Laura Florentino, Isabel Sánchez De Los Santos, Álvaro Cacicedo,Elisa IbáñezUniversitat Politècnica de València; Universidad de ZaragozaSpainFelipe L. Peñaranda-Foix
12:00Cardiff behavioral model analysis for frequency doubler designAinhoa Morales-Fernandez, Fernando Martin-Rodriguez, Rocio Moure-Fernandez, Monica Fernandez-Barciela, Aleksander Bogusz, Paul J. TaskerUniversidad de VigoSpainMónica Fernández-Barciela
12:20Analysis and design of material sensors based on free-running and injection-locked oscillatorsAlmudena Suárez, Mabel Pontón, Sergio SanchoUniversidad de CantabriaSpainMabel Pontón
13:00Lunch
Chairperson: 
14:30Keynote We2: Dan Jiao, Purdue University, USA, “ML-Assisted Multiphysics Design Automation for Heterogeneous Integration” 
15:10Coffee Break and Industrial/Academic Exhibit
Session We3: Technical session on active devices, circuits and measurement systems
Chairperson:
TimePaper TitleAuthorsInstitutionCountryPresenter
15:40A J- and D-Band Dual-Band Receiver for FMCW Radar and RadCom in a SiGe TechnologyAlbert-Marcel Schrotz, Sascha Breun, Georg Fischer, Robert WeigelFriedrich-Alexander-Universität Erlangen-NürnbergGermanyAlbert-Marcel Schrotz
16:00A Broadband Sub-THz Push-Push Frequency Doubler in 22 nm FDSOIKai Scheller, Andre Engelmann, Philip Hetterle, Robert Weigel, Albert-Marcel Schrotz, Georg FischerFriedrich-Alexander-Universität Erlangen-NürnbergGermanyKai Scheller
16:20A 148-166 GHz Meissner Push-Push VCO With -168 dBc/Hz FOMT Using a Single Transformer in SiGe BiCMOS TechnologySascha Breun, Albert-Marcel Schrotz, Manuel Koch, Georg Fischer, Robert WeigelFriedrich-Alexander-Universität Erlangen-NürnbergGermanySascha Breun
16:40A Wideband Low Power Single-To-Differential GaAs LNA for mmWave Spectrum Monitoring ApplicationsLarry Theran, Rafael RodriguezUniversity of Puerto Rico at MayagüezUSALarry Theran
17:00TCAD Accurate Modeling of Trap-Induced Effects in GaN HEMTsSimona Donati Guerrieri, Eva Catoggio, Fabrizio BonaniPolitecnico di TorinoItalySimona Donati Guerrieri
17:20Design of a Power Amplifier Using Methodology for Maximum Power Gain at 2.45 GHzDinael Guevara, Andres Adolfo Alvarez, Diego Parada Rozo, Diego Tami, Andres NavarroFrancisco de Paula Santander University; Federal University of Lavras; Federal University of Itajubá; Universidad Icesi; Not2Far Technologies IncColombia, BrazilDinael Guevara
19:00Welcome Reception